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| PD - 91354A IRFZ24N HEXFET(R) Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V G S RDS(on) = 0.07 ID = 17A Description Fifth Generation HEXFET (R) power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. TO-220AB Absolute Maximum Ratings Parameter ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw. Max. 17 12 68 45 0.30 20 71 10 4.5 5.0 -55 to + 175 300 (1.6mm from case) 10 lbf*in (1.1N*m) Units A W W/C V mJ A mJ V/ns C Thermal Resistance Parameter RJC RCS RJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Min. ---- ---- ---- Typ. ---- 0.50 ---- Max. 3.3 ---- 62 Units C/W www.irf.com 1 9/13/99 IRFZ24N Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)DSS V(BR)DSS/TJ RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. 55 --- --- 2.0 4.5 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- 0.052 --- --- --- --- --- --- --- --- --- --- 4.9 34 19 27 Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 0.07 VGS = 10V, ID = 10A 4.0 V VDS = VGS, ID = 250A --- S VDS = 25V, ID = 10A 25 VDS = 55V, VGS = 0V A 250 VDS = 44V, VGS = 0V, TJ = 150C 100 VGS = 20V nA -100 VGS = -20V 20 ID = 10A 5.3 nC VDS = 44V 7.6 VGS = 10V, See Fig. 6 and 13 --- VDD = 28V --- ID = 10A ns --- RG = 24 --- RD = 2.6, See Fig. 10 Between lead, 4.5 --- 6mm (0.25in.) nH from package --- 7.5 --- and center of die contact 370 --- VGS = 0V 140 --- pF VDS = 25V 65 --- = 1.0MHz, See Fig. 5 D G S Source-Drain Ratings and Characteristics IS ISM VSD trr Q rr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Min. Typ. Max. Units --- --- --- --- --- --- --- --- 56 120 17 A 68 1.3 83 180 V ns nC Conditions MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25C, IS = 10A, VGS = 0V TJ = 25C, IF = 10A di/dt = 100A/s D G S Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) ISD 10A, di/dt 280A/s, VDD V(BR)DSS, TJ 175C VDD = 25V, starting TJ = 25C, L = 1.0mH RG = 25, IAS = 10A. (See Figure 12) Pulse width 300s; duty cycle 2%. 2 www.irf.com IRFZ24N 100 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP 100 I , D rain-to-S ource C urrent (A ) D 10 I , D rain-to-S ource C urrent (A ) D VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP 10 4 .5V 4.5V 20 s P U LS E W ID TH TC = 2 5C 0.1 1 10 100 1 A 1 0.1 1 2 0 s P U L S E W ID T H T C = 17 5C 10 100 A V D S , D rain-to-S ourc e V oltage (V ) V DS , D rain-to-S ource V oltage (V ) Fig 1. Typical Output Characteristics, TJ = 25oC Fig 2. Typical Output Characteristics, TJ = 175oC 100 3.0 R D S (on) , Drain-to-S ource O n Resistance (N orm alized) I D = 1 7A I D , D rain-to-So urce C urren t (A ) 2.5 TJ = 2 5 C T J = 1 7 5 C 2.0 10 1.5 1.0 0.5 1 4 5 6 7 V DS = 2 5V 2 0 s P U L S E W ID TH 8 9 10 A 0.0 -60 -40 -20 0 20 40 60 80 V G S = 10 V 100 120 140 160 180 A V G S , G ate-to -So urce Voltag e (V) T J , Junction T em perature (C ) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRFZ24N 700 600 C , Capacitance (pF) 500 C iss 400 C oss 300 V G S , G ate-to-S ource V oltage (V ) V GS C is s C rs s C o ss = = = = 0V , f = 1M H z C g s + C g d , Cd s S H O R T E D C gd C d s + C gd 20 I D = 10 A V D S = 44 V V D S = 28 V 16 12 8 200 C rss 4 100 0 1 10 100 A 0 0 4 8 FO R TE S T C IR C U IT S E E FIG U R E 1 3 12 16 20 A V D S , D rain-to-S ourc e V oltage (V ) Q G , T otal G ate C harge (nC ) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 1000 I S D , Reverse D rain C urrent (A) O P E R A TIO N IN TH IS A R E A L IM ITE D B Y R D S (o n) T J = 1 75 C TJ = 25 C 10 I D , Drain C urrent (A ) 100 10 s 10 100 s 1 0.4 0.6 0.8 1.0 1.2 1.4 1.6 V G S = 0V 1.8 A 1 1 T C = 25 C T J = 17 5C S ing le P u lse 10 1m s 10m s 100 A 2.0 V S D , S ourc e-to-D rain V oltage (V ) V D S , D rain-to-S ource V oltage (V ) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRFZ24N VDS 20 RD VGS RG 16 D.U.T. + I D , D rain C u rren t (A m ps ) - VDD 10V 12 Pulse Width 1 s Duty Factor 0.1 % 8 Fig 10a. Switching Time Test Circuit VDS 4 90% 0 25 50 75 100 125 150 A 175 TC , C ase T em perature (C ) 10% VGS td(on) tr t d(off) tf Fig 9. Maximum Drain Current Vs. Case Temperature 10 Fig 10b. Switching Time Waveforms T h erm a l R e s p o n s e (Z th JC ) D = 0.5 0 1 0 .2 0 0 .1 0 0.0 5 0.02 0.01 S IN G L E P U L S E (T H E R M A L R E S P O N S E ) N o te s : 1 . D u ty f ac to r D = t PD M 0.1 t 1 t2 1 /t 2 0.01 0.00001 2 . P e a k T J = P D M x Z th J C + T C A 1 0.0001 0.001 0.01 0.1 t 1 , R ectang ular P ulse D uration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRFZ24N L E A S , S ingle P ulse A valanche E nergy (m J) VDS D.U.T. RG + V - DD 10 V 140 TO P 120 B O TTO M 100 ID 4.2 A 7.2A 1 0A IAS tp 0.01 80 Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp VDD VDS 60 40 20 0 V D D = 25 V 25 50 75 100 125 150 A 175 S tarting T J , J unc tion T em perature (C ) IAS Fig 12c. Maximum Avalanche Energy Vs. Drain Current Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50K QG 12V .2F .3F 10 V QGS VG QGD VGS 3mA D.U.T. + V - DS Charge IG ID Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit 6 www.irf.com IRFZ24N Peak Diode Recovery dv/dt Test Circuit D.U.T + + Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer - + RG * * * * dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test + VDD Driver Gate Drive P.W. Period D= P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt VDD Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple 5% ISD * VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFET(R) power MOSFETs www.irf.com 7 IRFZ24N Package Outline TO-220AB Dimensions are shown in millimeters (inches) 2.87 (.11 3) 2.62 (.10 3) 10 .54 (.4 15) 10 .29 (.4 05) 3 .7 8 (.149 ) 3 .5 4 (.139 ) -A 6.47 (.25 5) 6.10 (.24 0) -B 4.69 ( .18 5 ) 4.20 ( .16 5 ) 1 .32 (.05 2) 1 .22 (.04 8) 4 1 5.24 (.60 0) 1 4.84 (.58 4) 1.15 (.04 5) M IN 1 2 3 L E A D A S S IG NM E NT S 1 - GATE 2 - D R A IN 3 - S O U RC E 4 - D R A IN 1 4.09 (.55 5) 1 3.47 (.53 0) 4.06 (.16 0) 3.55 (.14 0) 3X 3X 1 .4 0 (.0 55 ) 1 .1 5 (.0 45 ) 0.93 (.03 7) 0.69 (.02 7) M BAM 3X 0.55 (.02 2) 0.46 (.01 8) 0 .3 6 (.01 4) 2.54 (.10 0) 2X N O TE S : 1 D IM E N S IO N IN G & TO L E R A N C ING P E R A N S I Y 1 4.5M , 1 9 82. 2 C O N TR O L LIN G D IM E N S IO N : IN C H 2 .92 (.11 5) 2 .64 (.10 4) 3 O U T LIN E C O N F O R M S TO JE D E C O U T LIN E TO -2 20 -A B . 4 H E A TS IN K & LE A D M E A S U R E M E N T S D O N O T IN C LU DE B U R R S . Part Marking Information TO-220AB E X A M P L E : TH IS IS A N IR F1 0 1 0 W IT H A S S E M B L Y LOT C ODE 9B1M A IN TE R N A TIO N A L R E C TIF IE R LOGO ASSEMBLY LOT CO DE PART NU MBER IR F 10 1 0 9246 9B 1M D A TE C O D E (Y Y W W ) YY = YEAR W W = W EEK WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936 http://www.irf.com/ Data and specifications subject to change without notice. 9/99 8 www.irf.com |
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